Propriedades luminescentes do SrGa2O4 dopado com íons de Ni2+

Abstract

The aim of this work is the synthesis and structural and optical investigation of SrGa2O4 samples doped with 1% of Ni2+ ions. These samples were synthesized by conventional solid-state reaction using as starting materials high purity SrCO3, Ga2O3 and NiO in stoichiometric quantities. Samples were structurally characterized by X-ray diffraction (XRD) method and the diffraction measurements showed that the samples have a single monoclinic phase. The XRD patterns were also refined by the Rietveld method which allowed the determination of the unit cell parameters. Optical characterization of the pure and doped SrGa2O4 samples were performed from photoluminescence, excitation and photoacoustic absorption measurements at room temperature. Emission spectra showed three emission bands localized at 557 nm, 661 nm and 844 nm and these bands were identified, respectively, with the following electronic transitions: 1T2 (1D) → 3A2 (3F), 3T1 (3F)→ 3A2 (3F) e 1T2 (1D) → 3T1 (3F). Excitation spectra showed six absorption bands associated to the electronic transitions from the level 3A2 (3F) to the 3T1 (3P), 1A1 (1G), 1T2 (1D), 3T1 (3F), 1E (1D) e 1T2, 1E (1G) levels. Photoacoustic absorption measurements were also carried out in order to verify the optical transitions observed in the excitation spectra and to identify new optical absorption bands. The results showed that Ni2+ ions occupy two different octahedral sites in the SrGa2O4 doped sample. From the optical transitions observed in the excitation and photoacoustic spectra, we determined the crystal-field parameter, Dq, and Racah parameters, B and C. The ratio Dq/B ≈ 1.2 for both sites are typical for Ni2+ ions inserted in oxide lattices and in octahedral coordination.